SiC基板およびエピタキシー

RFエレクトロニクス向けSiC

Scale up the production of GaN-on-SiC RF power amplifiers and other RF and microwave devices with our high-quality semi-insulating SiC substrates.

Coherent has pioneered the development of large-diameter, semi-insulating SiC substrates, and delivers high resistivity material to enable fabrication of components with low power dissipation, high frequency operation, and good thermal stability.

Semi-Insulating Silicon Carbide Material Properties

Coherent continuously improves our materials quality and increases substrate diameters to enable our customers to increase device performance and lower costs.

Semi-Insulating Silicon Carbide Material Properties

物理的特性

構造

六方晶、単結晶

直径

最大200ミリメートル

成績

プライム、開発、機械

熱特性

Thermal Conductivity

370 (W/mK) 室温時

熱膨張係数

4.5 × 10⁻⁶/K

比熱(25°C)

0.71 (J/g・℃)

Additional Key Properties of Coherent SiC Substrates (typical values)

パラメータ

Semi-insulating

ポリタイプ

6H

ドーパント

Vanadium

比抵抗

1019 オーム・cm

オリエンテーション

On-axis

粗さ、Ra

<5Å

転位密度

< 10,000 cm-2

マイクロパイプ密度

< 10cm-2