ネットワーキング
High-Power 100 mW DFB Laser Diode Chips
Get 100 mW of uncooled output power and 300 mW of output power when cooled, to enable 100 Gbps and 200 Gbps per lane, respectively, for cutting-edge O-band transceivers.
These chips are available in four wavelength bands to match coarse division multiplexing (CWDM) wavelength requirements in uncooled DR4 and DR8 transceivers. They feature high reliability and are qualified according to GR-468 for use in non-hermetic packages.
High-Power 100mW Laser Diode Chips
Get these chips tested and Inspected on translucent tape with grip-ring Ø 150 mm. Future-proof technology that can support advanced silicon transceiver designs to 1.6T.
主な特徴
Designed for uncooled O-band CWDM4
Qualified according to GR-468 for use in non-hermetic packages
Excellent reliability
Top anode and backside cathode configuration
RoHS指令に準拠
Available wavelengths - CWDM4 1270 nm to 1330 nm
関連製品
注目の成功事例
Laser Framework、シーメンスのデジタルファクトリーで存在感を示す
Coherent 開発支援とCoherent FrameWorkソフトウェアにより、シーメンスはID Link製造プログラムを成功裏に導入することができました。