材料
III-V族RFエピタキシャルウエハー
Improve efficiency, bandwidth, and reliability when making high-speed electronic components by starting with our consistent, high-performance, III-V epitaxial wafers.
Coherent has extensive capabilities for the development, design, and fabrication of advanced III-VI semiconductor epitaxial wafers. We enable you to easily bring next-generation technology to your application and support you with volume production.
RF Wafer Capability
Source 2-inch to 6-inch wafers for wireless devices, datacenters, high-speed communication networks, and more.
Device Type |
Base Material |
Material Capability |
Wafer Diameter |
EpiHBT® |
GaAs |
InGaP/GaAs, AlGaAs/GaAs |
up to 150mm |
InP |
InP/InGaAs |
up to 100mm |
|
EpiBiFET® |
GaAs |
InGaP/GaAs, AlGaAs/GaAs |
up to 150mm |
InP |
InP/InGaAs, InP/InAlAs |
up to 100mm |
|
EpiFET® |
GaAs |
AlGaAs/GaAs, InGaP/GaAs |
up to 150mm |
InP |
InP/InGaAs, InP/InAlAs |
up to 100mm |
関連製品
注目ブログ
SiC Circuitry Makes EVs Better
Coherent is one of the few companies worldwide with a complete, vertically integrated SiC manufacturing capability. We produce SiC wafers and epitaxy, all the way through power devices and modules. Furthermore, the unmatched quality with which we can produce SiC material makes Coherent virtually the only supplier positioned to successfully transition from the current standard wafer diameter of 150 mm up to 200 mm.
注目の成功事例
Laser Framework、シーメンスのデジタルファクトリーで存在感を示す
Coherent 開発支援とCoherent FrameWorkソフトウェアにより、シーメンスはID Link製造プログラムを成功裏に導入することができました。